二硫化鉿晶體 HfS2 （Hafnium Disulfide）晶體尺寸：~10毫米電學性能：半導體晶體結(jié)構(gòu)：六邊形晶胞參數(shù)：a = b = 0.363 nm, c = 0.586 nm, α = β = 90#176;, γ = 120#176;晶體類型：合成晶體純度：＞99.995%

二硫化鉿晶體 HfS2 (Hafnium Disulfide)
晶體尺寸：~10毫米
電學性能：半導體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a HfS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4

Powder X-ray diffraction (XRD) of a single crystal HfS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal HfS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal HfS2. Measurement was performed with a 785 nm Raman system at room temperature.