硫化鍺晶體 GeS（Germanium Sulfide）晶體尺寸：~10毫米電學性能：半導體晶體結(jié)構(gòu)：斜方晶系晶胞參數(shù)：a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90#176;晶體類型：合成晶體純度：＞99.995%

硫化鍺晶體 GeS(Germanium Sulfide)
晶體尺寸：~10毫米
電學性能：半導體
晶體結(jié)構(gòu)：斜方晶系
晶胞參數(shù)：a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a single crystal GeS aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal GeS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GeS by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GeS. Measurement was performed with a 785 nm Raman system at room temperature.